cszmi-conductoi ^pi , {j nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 silicon npn power transistor KSD5074 description ? high breakdown voltage- : vcbo= 1500v (min) ? high switching speed ? high reliability applications ? designed for color tv horizontal output applicaitions absolute maximum ratings(ta=25'c) symbol vcbo voeo vebo lo icp pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current- continuous collector current-peak collector power dissipation @ tc=25'c junction temperature storage temperature range value 1500 800 6 2.5 10 50 150 -55-150 unit v v v a a w ?c ?c f pin 1.base 2. collector 3.b/iitter to-3pml package i 2 :? i: 1at silicon npn power transistor KSD5074 electrical characteristics tc=25'c unless otherwise specified symbol vce(sat) vee(sat) icbo iebo hfe fr tf parameter collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product fall time conditions lc= 2a; ib= 0.6a lc= 2a; ib= 0.6a vcb= 800v ; ie= 0 veb= 5v ; lc= 0 lc= 0.5a ; vce= 5v lc=0.5a; vce= 10v lc= 2a , ib1= 0.6a ; ib2= -1 2a rl=100fi;vcc=200v min 8 typ. 3 max 8.0 1.5 10 1 0.4 unit v v ua ma mhz u s
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